BSS295

BSS 295 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 G Type BSS 295 Type BSS 295 BSS 295 Pin 2 D Marking SS 295 Pin 3 S VDS 50 V ID 1.4 A RDS(on) 0.3 Ω Package TO-92 Ordering Code Q67000-S238 Q67000-S105 Tape and Reel Information E6288 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 50 50 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID ± 14 ± 20 A 1.4 TA = 24 °C DC drain current, pulsed IDpuls 5.6 TA = 25 °C Power dissipation Ptot 1 W TA = 25 °C Semiconductor Group 1 12/05/1997 BSS 295 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.4 0.1 8 10 0.25 0.45 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 0.3 0.5 VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C VDS = 30 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS(on) VGS = 20 ...