Silicon Bridge Rectifiers
KBU8005-G Thru. KBU810-G
Reverse Voltage: 50 to 1000V
Forward Current: 8.0A
RoHS Device
Features
-Surge overload rating -200 amperes peak.
-Ideal for printed circuit board.
-UL recognized file # E349301 R
Mechanical Data
-Epoxy: UL 94V-0 rate flame retardant.
-Case: Molded plastic, KBU
-Mounting position: Any.
-Weight: 7.40 grams (approx.).
0.700(17.8)
0.600(16.8)
KBU
0.157(4.0)*45°
0.935(23.7)
0.895(22.7)
0.15ΦX23L
(3.8ΦX5.7L)
HOLE TH RU
300
(7 .5)
0.780(19.8)
0.740(18.8)
1.00
(2 5 .4)M IN.
0.052(1.3)DIA.
0.048(1.2)TYP.
.08 7(2.2)
.071 (1.8)
0.220(5.6)
0.180(4.6)
0.276(7.0)
0.256(6.5)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbol
KBU
8005-G
KBU
801-G
KBU
802-G
KBU
804-G
KBU
806-G
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC 50
Maximum Average Forward
Rectified Output Current
@Tc=100°C
Peak Forward Surge Current, 8.3ms Single
Half Sine-Wave Super Imposed
On Rated Load (JEDEC Method)
Maximum Instantaneous Forward Voltage Drop
per Element at 4.0A
Max. Reverse Leakage at rated @TJ=25°C
DC Blocking Voltage per Element @TJ=100°C
Typical Junction Capacitance Per Element
(Note 1)
I(AV)
IFSM
VF
IR
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
100 200 400 600
70 140 280 420
100 200 400 600
8.0
200
1.0
10.0
300
250
-55 to +150
-55 to +150
KBU
808-G
800
560
800
KBU
810-G
1000
700
1000
Unit
V
V
V
A
A
V
μA
pF
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR79
Comchip Technology CO., LTD.
REV: B
Page 1