BSS124

BSS 124 SIPMOS ® Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 V Pin 1 G Type BSS 124 Type BSS 124 Pin 2 D Marking SS 124 Pin 3 S VDS 400 V ID 0.12 A RDS(on) 28 Ω Package TO-92 Ordering Code Q67000-S172 Tape and Reel Information E6288 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 400 400 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID ± 14 ± 20 A 0.12 TA = 37 °C DC drain current, pulsed IDpuls 0.48 TA = 25 °C Power dissipation Ptot 1 W TA = 25 °C Semiconductor Group 1 12/05/1997 BSS 124 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 400 2 0.1 8 10 16 2.5 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.5 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 50 µA VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 28 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.12 A Semicondu...