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BSS123LT1

Motorola Inc
Part Number BSS123LT1
Manufacturer Motorola Inc
Description TMOS FET Transistor
Published Mar 23, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N–Channel 3 DRAIN 1 GATE...
Datasheet PDF File BSS123LT1 PDF File

BSS123LT1
BSS123LT1

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TMOS FET Transistor N–Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 Motorola Preferred Device ® MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Symbol VDSS VGS VGSM ID IDM 3 1 2 Value 100 ± 20 ± 40 0.
17 0.
68 Unit Vdc Vdc Vpk Adc CASE 318 – 08, STYLE 21 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(3) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W...


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