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BSS110

Fairchild Semiconductor
Part Number BSS110
Manufacturer Fairchild Semiconductor
Description P-Channel Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancem...
Datasheet PDF File BSS110 PDF File

BSS110
BSS110


Overview
May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.
They can be used, with a minimum of effort, in most applications requiring up to 0.
17A DC and can deliver pulsed currents up to 0.
68A.
This product is particularly suited to low voltage applications requiring a low current high side switch.
Features BSS84: -0.
13A, -50V.
RDS(ON) = 10Ω @ VGS = -5V.
BSS110: -0.
17A, -50V.
RDS...



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