Document
BSR58
BSR58
N-Channel Low-Frequency Low-Noise Amplifier
• This device is designed for low-power chopper or switching application sourced from process 51
2
3
SOT-23 Mark: M6 1. Drain 2. Source 3. Gate
1
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VDGO VGSO IGF Ptot TSTG TJ Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Power Dissipation up to Tamb=40°C Storage Temperature Range Junction Temperature Value 40 - 40 50 250 - 55 ~ 150 150 Units V V mA mW °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVGSS IGSS IDSS VGS(off) VDS(on) rds(on) Crss td tr toff Parameter Gate-Source Voltage Gate Reverse Current Zero-Gate Voltage Drain Current Gate-Source Cut-off Voltage Drain-Source On Voltage Drain-Source On Reverse Reverse Transfer Capacitance Delay Time Rise Time Turn-off Time Test Condition VDS = 0V, IC = 1µA VGS = 20V VDS = 15V, VGS = 0V VDS = 15V, ID = 0.5nA VGS = 0V, ID = 5mA VGS = 0V, ID = 0 VDS = 0V, VGS = 10V VDD = 10V, VGS(on) = 0V ID = 10mA, VGS(off) = 10V 8 0.8 Min. 40 Typ. Max. 1 80 4 0.4 60 5 10 10 100 Units V nA mA V V Ω pF nS nS nS
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
BSR58
Package Dimensions
SOT-23
0.20 MIN 2.40
±0.10
0.40 ±0.03
1.30
±0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 ±0.03 0.96~1.14 2.90 ±0.10
0.12 –0.023
+0.05
0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF
0.97REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
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