BSR17

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR17A NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 02 Philips Semiconductors Product specification NPN switching transistor FEATURES Low current (max. 100 mA) Low voltage (max. 40 V). APPLICATIONS Switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: BSR18A. 1 handbook, halfpage BSR17A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 MARKING TYPE NUMBER BSR17A MARKING CODE U92 Top view 1 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = 10 mA; VCE = 1 V IC = 10 mA; VCE = 20 V; f = 100 MHz ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA open emitter open base CONDITIONS − − − − 100 300 − MIN. MAX. 60 40 100 250 300 − 240 MHz ns V V mA mW UNIT 1997 Jun 02 2 Philips Semiconductors Product specification NPN switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipati...