UPD5702TU

NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU FEATURES MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz ON CHIP OUTPUT POWER CONTROL FUNCTION SINGLE SUPPLY VOLTAGE: VDS = 3.0 V TYP PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm) SUITABLE FOR HIGH- DENSITY SURFACE MOUNT DESCRIPTION NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.4 GHz application. This IC consists of two stage amplifiers. The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package. Ideally suited for high density surface mount designs. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. INTERNAL BLOCK DIAGRAM Pout2 1 Pout2 2 GND 3 Pin1 4 8 Pin2 7 Pin2 6 GND 5 Pout1 APPLICATIONS 1.9 GHZ Application Ex. PHS etc. 2.4 GHz application Ex. Bluetooth, Wireless LAN, etc. General purpose medium power AGC amplifier ELECTRICAL CHARACTERISTICS (TA = 25°C,...