PRELIMINARY DATA SHEET
Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS
and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin
L2MM (Lead Less Mini Mold) plastic package.
• Output Power
: Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply voltage
: VDS = 3.0 V TYP.
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.
• 1.9 GHz applications (Example : PHS etc.)
• 2.4 GHz applications (Example : Wireless LAN etc.)
8-pin Lead-Less Minimold
• 8 mm wide embossed taping
• Pin 5, 6, 7, 8 indicates pull-out direction of tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPD5702TU
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10455EJ01V0DS (1st edition)
Date Published November 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2003