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BSP92P

Infineon Technologies AG

SIPMOS Small-Signal-Transistor

Preliminary data BSP 92 P SIPMOS Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • dv/dt...


Infineon Technologies AG

BSP92P

File Download Download BSP92P Datasheet


Description
Preliminary data BSP 92 P SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Product Summary VDS RDS(on) ID -250 12 -0.26 SOT-223 Drain pin 2/4 Gate pin1 Source pin 3 2 1 VPS05163 V Ω A 4 3 Type BSP 92 P Package SOT-223 Ordering Code Q67042-S4169 Tape and Reel Information - Marking BSP92P Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -0.26 -0.23 Unit A Pulsed drain current TA=25°C ID puls dv/dt VGS Ptot Tj , Tstg -1.04 6 ±20 1.8 -55... +150 55/150/56 kV/µs V W °C Reverse diode dv/dt IS =-0.26A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-07-25 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) BSP 92 P Symbol min. RthJS RthJA - Values typ. 15 max. 25 Unit K/W 80 48 115 70 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) RDS(on) -250 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-130µA Zero gate voltage drain current VDS =-250V, VGS =0, Tj =25°C VDS =-250V, VGS =0, Tj =1...




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