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BSP92 Dataheets PDF



Part Number BSP92
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor
Datasheet BSP92 DatasheetBSP92 Datasheet (PDF)

BSP 92 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSP 92 Type BSP 92 Pin 2 D Pin 3 S Pin 4 D VDS -240 V ID -0.2 A RDS(on) 20 Ω Package SOT-223 Marking BSP 92 Ordering Code Q62702-S653 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -240 -240 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous dra.

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BSP 92 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSP 92 Type BSP 92 Pin 2 D Pin 3 S Pin 4 D VDS -240 V ID -0.2 A RDS(on) 20 Ω Package SOT-223 Marking BSP 92 Ordering Code Q62702-S653 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -240 -240 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 20 ± A -0.2 TA = 35 °C DC drain current, pulsed IDpuls -0.8 TA = 25 °C Power dissipation Ptot 1.7 W TA = 25 °C Semiconductor Group 1 18/02/1997 BSP 92 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 72 ≤ 12 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -240 -1.5 -0.1 -10 -10 12 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -100 -0.2 µA VDS = -240 V, VGS = 0 V, Tj = 25 °C VDS = -240 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS -100 nA Ω 20 VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = -10 V, ID = -0.2 A Semiconductor Group 2 18/02/1997 BSP 92 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.06 0.13 95 20 10 - S pF 130 30 15 ns 8 12 VDS≥ 2 * ID * RDS(on)max, ID = -0.2 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Rise time tr 25 40 VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Turn-off delay time td(off) 25 33 VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Fall time tf 42 55 VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω Semiconductor Group 3 18/02/1997 BSP 92 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A -0.9 -0.2 -0.8 V -1.2 Values typ. max. Unit ISM VSD TA = 25 °C Inverse diode forward voltage VGS = 0 V, IF = -0.4 A, Tj = 25 °C Semiconductor Group 4 18/02/1997 BSP 92 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -.


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