Document
BSP 92
SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level
• VGS(th) = -0.8...-2.0 V
Pin 1 G Type BSP 92 Type BSP 92 Pin 2 D Pin 3 S Pin 4 D
VDS
-240 V
ID
-0.2 A
RDS(on)
20 Ω
Package SOT-223
Marking BSP 92
Ordering Code Q62702-S653
Tape and Reel Information E6327
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -240 -240 Unit V
VDS VDGR VGS Vgs ID
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
± 20 ± A -0.2
TA = 35 °C
DC drain current, pulsed
IDpuls
-0.8
TA = 25 °C
Power dissipation
Ptot
1.7
W
TA = 25 °C
Semiconductor Group
1
18/02/1997
BSP 92
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 72 ≤ 12 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA RthJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
-240 -1.5 -0.1 -10 -10 12 -2
V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
-0.8
VGS=VDS, ID = -1 mA
Zero gate voltage drain current
IDSS
-1 -100 -0.2
µA
VDS = -240 V, VGS = 0 V, Tj = 25 °C VDS = -240 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS
-100
nA Ω 20
VGS = -20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = -10 V, ID = -0.2 A
Semiconductor Group
2
18/02/1997
BSP 92
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.06 0.13 95 20 10 -
S pF 130 30 15 ns 8 12
VDS≥ 2 * ID * RDS(on)max, ID = -0.2 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = -25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω
Rise time
tr
25 40
VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω
Turn-off delay time
td(off)
25 33
VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω
Fall time
tf
42 55
VDD = -30 V, VGS = -10 V, ID = -0.25 A RGS = 50 Ω
Semiconductor Group
3
18/02/1997
BSP 92
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A -0.9 -0.2 -0.8 V -1.2 Values typ. max. Unit
ISM VSD
TA = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = -0.4 A, Tj = 25 °C
Semiconductor Group
4
18/02/1997
BSP 92
Power dissipation Ptot = ƒ(TA)
Drain current ID = ƒ(TA) parameter: VGS ≥ -.