BSP89

BSP 89 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 G Type BSP 89 Type BSP 89 Pin 2 D Pin 3 S Pin 4 D VDS 240 V ID 0.36 A RDS(on) 6Ω Package SOT-223 Marking BSP 89 Ordering Code Q67000-S652 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 240 240 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 14 ± 20 A 0.36 TA = 29 °C DC drain current, pulsed IDpuls 1.44 TA = 25 °C Power dissipation Ptot 1.7 W TA = 25 °C Semiconductor Group 1 Sep-12-1996 BSP 89 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 72 ≤ 12 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 240 1.5 0.1 10 10 3.5 4 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 0.2 µA VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 2...