CMOS Dynamic RAM
VIS
Description
VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM
The device is CMOS Dynamic RAM organized as 4,19...
Description
VIS
Description
VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM
The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin plastic SOJ or TSOP (II).
Features
Single 5V (±10 %) or 3.3V (±10 %) only power supply
High speed tRAC access time : 50/60 ns Low power dissipation
- Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.)
- Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.)
Fast Page Mode access I/O level : TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V) 2048 refresh cycles in 32 ms (Std) or 128ms (S - version...
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