BSP60

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BSP60; BSP61; BSP62 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 22 1999 Apr 29 Philips Semiconductors Product specification PNP Darlington transistors FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp drivers. DESCRIPTION PNP Darlington transistor in a SOT223 plastic package. NPN complements: BSP50, BSP51 and BSP52. 1 Top view 2 4 BSP60; BSP61; BSP62 PINNING PIN 1 2,4 3 base collector emitter DESCRIPTION 2, 4 1 3 MAM266 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP60 BSP61 BSP62 VCES collector-emitter voltage BSP60 BSP61 BSP62 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 − − − − − − − − −65 − −65 −45 −60 −80 −5 −0.5 −1.5 −100 1.25 +150 150 +150 V V V V A A mA W °C °C °C PARAMETER collector-bas...