"§upertexinc.
VN06D
N-Channel Enhancement-Mode
Vertical DMOS Power FETs
Ordering Information
BVDSS '
BVDGS
350V
400V
RDS(ON)
(max)
10n
10n
IOlON)
(min)
0.75A
0.75A
T0-39
VN0635N2
VN0640N2
Order Number' Package
T0-92
T0-220
VN0635N3 VN0635N5
VN0640N3 VN0640N5
Dice
VN0635ND
VN0640ND
Features
o Freedom from secondary breakdown
o Low power drive requirement
o Ease of paralleling
o Low CISS and fast switching speeds
o Excellent thermal stability
o Integral Source-Drain diode
o High input impedance and high gain
o Complementary N- and P-Channel devices
Applications
o Motor control
o Converters
o Amplifiers
o Switches
o Power supply circuits
o Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capaCitance, and
fast switching speeds are desired.
•
Package Options
(Note 1)
i
TO-39
TO-92
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature"
"Distance of 1.6 mm from case for 10 seconds.
±20V
8-53
TO-220
Note 1: See Package Outline section for discrete pinouts.
