BSP42

BSP 40 ... BSP 43 NPN Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 1.65 4 ±0.2 ±0.3 6.5 ±0.1 3 ±0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehäuse 3.5 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 0.7 2.3 2 3 3.25 Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E Maximum ratings (TA = 25/C) 7 Grenzwerte (TA = 25/C) BSP 40 BSP 41 BSP 42 BSP 43 80 V 90 V 5V 1.3 W 1) 1A 2A 200 mA 150/C - 65…+ 150/C Kennwerte (Tj = 25/C) Min. Typ. – – – – – Max. 100 nA 50 :A 100 nA 250 mV 500 mV Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS 60 V 70 V Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 60 V IE = 0, VCB = 60 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IEB0 VCEsat VCEsat – – – Collector saturation volt. – Kollektor-Sättigungsspg. 2) ICB0 ICB0 – – 1 ) M...