BSP 373
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V Pin ...
BSP 373
SIPMOS ® Small-Signal
Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D
Type BSP 373 Type BSP 373
VDS
100 V
ID
1.7 A
RDS(on)
0.3 Ω
Package SOT-223
Marking BSP 373
Ordering Code Q67000-S301
Tape and Reel Information E6327
Maximum Ratings Parameter Continuous drain current Symbol Values 1.7 Unit A
ID IDpuls
6.8
TA = 28 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
EAS
45
mJ
ID = 1.7 A, VDD = 25 V, RGS = 25 Ω L = 23.3 mH, Tj = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 1.8
V W
TA = 25 °C
Semiconductor Group
1
Sep-12-1996
BSP 373
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA RthJS
1)
Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
100 3 0.1 10 10 0.16 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 0 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS...