BSP372

BSP 372 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level Avalanche rated VGS(th) = 0.8 ...2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 100 V ID 1.7 A RDS(on) 0.31 Ω Package Marking BSP 372 Type BSP 372 SOT-223 Ordering Code Q 67000-S300 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 28 ˚C ID A 1.7 DC drain current, pulsed TA = 25 ˚C IDpuls 6.8 EAS Avalanche energy, single pulse ID = 1.7 A, VDD = 25 V, RGS = 25 Ω L = 23.3 mH, Tj = 25 ˚C mJ 45 VGS Vgs Ptot Gate source voltage Gate-source peak voltage,aperiodic Power dissipation TA = 25 ˚C ± 14 ± 20 V W 1.8 Data Sheet 1 05.99 BSP 372 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS -55 ... + 150 -55 ... + 150 ˚C ≤ 70 ≤ 10 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C V (BR)DSS V 100 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 0.8 IDSS 1.4 2 µA Zero gate voltage drain current VDS = 100 V, V GS = 0 V, Tj = 25 ˚C VDS = 100 V, V GS...