VN0535

– OVBNSO05L4E0TE – VN0535 VN0540 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V 400V † MIL visual screening available RDS(ON) (max) 35Ω 35Ω ID(ON) (min) 250mA 250mA Order Number / Package TO-39 TO-92 Die† VN0535N2 VN0535N3 VN0535ND — VN0540N3 VN0540ND 7 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Features ■ Free from secondary breakdown ■ Low power drive requirement ■ Ease of paralleling ■ Low CISS and fast switching speeds ■ Excellent thermal stability ■ Integral Source-Drain diode ■ High input impedance and high gain ■ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the ...