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VN01C
N-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVoss I BVOClS
1...
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'flI !iupertexinc.
VN01C
N-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVoss I BVOClS
160V 200V
ROS{ON)
(max)
100 100
IOION)
(min)
0.4A O.4A
TO-39
VN0116N2 VN0120N2
Order Number I Package
TO-92
TQ-220
VN0116N3 VN0120N3
VN0116N5 VN0120N5
Dice
VN0116ND VN0120ND
Features
D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power
transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are fr...