2N6659

~ 't1I !!!iupertexinc. 2N6659 N-Channel Enhancement-Mode Vertical DMOS Power FET Ordering Information BVoss / BVOGS 35V ROS(ON) (max) 1.8n IO(ON) (min) 1.5A Order Number / Package TO-39 2N6659 Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Applications o Motor control o Converters o Amplifiers o Switches o Power supply circuits o Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient in...