TP02L

" !iupertexinc. I P-Channel Enhancement-Mode Vertical DMOS Power FETs TP02L Ordering Information BVoss I BVOGS -20V -40V ROS(ON) (max) 2.0n 2.0n IO(ON) (min) -2.0A -2.0A Order Number I Package TO-39 TO-92 TP0202N2 TP0202N3 TP0204N2 TP0204N3 Features o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage o Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex VerticalDMOS Power FET...