TN06L

"§upertexinc. I N-Channel Enhancement-Mode Vertical DMOS Power FETs TN06L Ordering Information BVoss I BVOGS 20V RDS(ON) (max) 0.750 40V 0.750 "Same as SO·20 with 300 mil wide body. ID(ON) (min) 4.0A 4.0A Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices VGS(th) (max) 1.SV 1.SV T0-39 TNOS02N2 TNOS04N2 Order Number I Package TO-92 TNOS02N3 SOW-20' - TNOS04N3 TNOS04WG DICE TNOS02ND TNOS04ND Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Ch...