BSP319

BSP 319 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level Avalanche rated VGS(th) = 1.2 ...2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 50 V ID 3.8 A RDS(on) 0.07 Ω Package Marking BSP 319 Type BSP 319 SOT-223 BSP 319 Ordering Code Q67000-S273 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 29 ˚C ID A 3.8 DC drain current, pulsed TA = 25 ˚C IDpuls 15 EAS Avalanche energy, single pulse ID = 3.8 A, VDD = 25 V, RGS = 25 Ω L = 6.2 mH, Tj = 25 ˚C mJ 90 VGS Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA = 25 ˚C ± 20 Class 1 V Ptot W 1.8 Data Sheet 1 05.99 BSP 319 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Tj Tstg RthJA R thJS -55 ... + 150 -55 ... + 150 ˚C ≤ 70 ≤ 10 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C V (BR)DSS V 50 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 1.2 IDSS 1.6 2 µA Zero gate voltage drain current VDS = 50 ...