64 Mbit 3V supply flash memory
M28W640HCT M28W640HCB
64 Mbit (4 Mb x 16, boot block) 3 V supply Flash memory
Features
Supply voltage
– VDD = 2.7 V t...
Description
M28W640HCT M28W640HCB
64 Mbit (4 Mb x 16, boot block) 3 V supply Flash memory
Features
Supply voltage
– VDD = 2.7 V to 3.6 V – VPP = 12 V for fast program (optional)
Access times: 70 ns Asynchronous Page Read mode
– Page width: 4 words
– Page access: 25 ns
– Random access: 70 ns
Programming time:
– 10 μs typical
– Double Word Programming option
– Quadruple Word Programming option
Common Flash interface Memory blocks
– Parameter blocks (top or bottom location)
– Main blocks
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
– WP for block lock-down
Security
– 128 bit user programmable OTP cells
– 64 bit unique device identifier
Automatic standby mode Program and Erase Suspend 100,000 program/erase cycles per block Electronic signature
– Manufacturer code: 20h
– Top device code, M28W640HCT: 8848h
– Bottom device code, M28W640HCB: 8849h
FBGA
TFBGA48 (ZB) 6.39 x 10.5 mm
TSOP48 (N...
Similar Datasheet