M29DW127G

M29DW127G 128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional) „ Asynchronous random/page read – Page width: 8 words / 16 bytes – Page access: 25 ns – Random access: 60 or 70, 80 ns „ Enhanced Buffered Program commands – 256 words „ Programming time – 15 μs per byte/word (typical) – 32-word write buffer – Chip program time: 5 s with VPPH and 8 s without VPPH „ Erase verify „ Memory blocks – Quadruple bank memory array: 16 Mbit+48 Mbit+48 Mbit+16 Mbit – Parameter blocks (at top and bottom) „ Dual operation – while program or erase in one bank, read in any of the other banks „ Program/erase suspend and resume modes – Read from any block during program suspend – Read and program another block during erase suspend „ Unlock Bypass/Block Erase/Chip Erase/Writ...