BSP304A

DISCRETE SEMICONDUCTORS DATA SHEET BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors Product specification File under Discrete Semiconductors, SC07 1995 Apr 07 Philips Semiconductors Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors FEATURES Direct interface to C-MOS, TTL etc. High speed switching No secondary breakdown. APPLICATIONS Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. PINNING - TO-92 variant handbook, halfpage BSP304; BSP304A DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. d 1 2 3 g MAM144 s PIN BSP304 1 2 3 BSP304A 1 2 3 SYMBOL DESCRIPTION g d s gate drain source CAUTION Fig.1 Simplified outline and symbol. s g d source gate drain The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSO VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = −170 mA; VGS = −10 V up to Tamb = 25 °C open drain ID = −1 mA; VDS = VGS CONDITIONS − − −1.7 − − − MIN. MAX. −300 ±20 −2.55 −170 17 1 V V V mA Ω W UNIT 1995 Apr 07 2 Philips Semiconductors Product specification P-channel enhancement mode ver...