BSP299

BSP 299 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 299 Type BSP 299 VDS 500 V ID 0.4 A RDS(on) 4Ω Package SOT-223 Marking BSP 299 Ordering Code Q67000-S225 Tape and Reel Information E6327 Maximum Ratings Parameter Continuous drain current Symbol Values 0.4 Unit A ID IDpuls 1.6 TA = 44 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse EAS 130 mJ ID = 1.2 A, VDD = 50 V, RGS = 25 Ω L = 163 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 1.8 V W TA = 25 °C Semiconductor Group 1 Sep-12-1996 BSP 299 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 500 3 0.1 10 10 3.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 0 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0...