BSP298

BSP 298 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 400 V ID 0.5 A RDS(on) 3Ω Package Marking BSP 298 Type BSP 298 SOT-223 BSP 298 Ordering Code Q67000-S200 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 26 °C ID A 0.5 DC drain current, pulsed TA = 25 °C IDpuls 2 E AS Avalanche energy, single pulse ID = 1.35 A, VDD = 50 V, RGS = 25 Ω L = 125 mH, Tj = 25 °C mJ 130 V GS P tot Gate source voltage Power dissipation TA = 25 °C ± 20 1.8 V W Semiconductor Group 1 Sep-12-1996 BSP 298 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS -55 ... + 150 -55 ... + 150 °C ≤ 70 ≤ 10 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 0 °C V (BR)DSS V 400 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 400 V, V GS = 0 V, Tj = 25 °C V DS = 400 V,...