BSP297

Rev. 1.0 BSP297 SIPMOS Ò Small-Signal-Transistor Feature · N-Channel · Enhancement mode · Logic Level · dv/dt rated Product Summary VDS RDS(on) ID 200 1.8 0.66 SOT-223 4 V W A 3 2 1 VPS05163 Type BSP297 Package SOT-223 Ordering Code Q67000-S068 Tape and Reel Information E6327: 3000 pcs/reel Marking BSP297 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA=25°C TA=70°C Value 0.66 0.53 Unit A ID Pulsed drain current TA=25°C ID puls dv/dt VGS Ptot Tj , Tstg 2.64 6 ±20 Class 1 1.8 -55... +150 55/150/56 W °C kV/µs V Reverse diode dv/dt IS=0.66A, V DS=160V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-11-04 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP297 Symbol min. RthJS RthJA 80 48 115 70 Values typ. 15 max. 25 K/W Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, ID=250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 200 0.8 Values typ. 1.4 max. 1.8 Unit V Gate threshold voltage, VGS = VDS ID=400µA Zero gate voltage drain current V DS=200V, VGS=0, Tj=25°C V DS=200V, VGS=0, Tj=150°C µA 10 1 1.2 1 0.1 100...