BSP296

Rev. 1.0 BSP296 SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Product Summary VDS 100 0.7 1.1 SOT-223 4 V Ω A RDS(on) ID 3 2 1 VPS05163 Type BSP296 Package SOT-223 Ordering Code Q67000-S067 Tape and Reel Information E6327 Marking BSP296 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 1.1 0.88 Unit A Pulsed drain current TA=25°C I D puls dv/dt VGS Ptot 4.4 6 ±20 Class 1 1.79 -55... +150 55/150/56 W °C kV/µs V Reverse diode d v/dt IS=1.1A, VDS=80V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j , Tstg Page 1 2002-12-10 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) BSP296 Symbol min. RthJS RthJA - Values typ. max. 25 Unit K/W - 115 70 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID =250µA Symbol min. V(BR)DSS Values typ. 1.4 max. 1.8 Unit 100 0.8 V Gate threshold voltage, VGS = VDS ID=400µA VGS(th) I DSS Zero gate voltage drain current VDS=100V, VGS=0, Tj=25°C VDS=100V, VGS=0, Tj=150°C µA 10 0.62 0.43 0.1 50 100 1 0.7 nA Ω Gate-source le...