2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
CGB241
Data Sheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Description:
The CGB241 GaAs Power Amplifier MMIC ...
Description
CGB241
Data Sheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Description:
The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1, or IEEE 802.11b). Its high power added efficiency (typically 50%) and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 22.5 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications.
Features:
2-stage Bluetooth InGaP HBT power amplifier
Single voltage supply
Wide operating voltage range 2.0 - 5.5 V
POUT = 22.5 dBm at VC = 3.2 V
Overall power added efficiency ( PAE ) typically 50%
Analog power control with four power steps
High PAE at low–power mode
High harmonic suppression typ. 35 dBc
Easy external matching concept Thin Small Leadless Package (A = 2.6mm2)
Applications:
Bluetooth Class 1 Home RF Cordless Phones IEEE 802.11b ISM-band Spread
Spectrum
Package Outline:
Pin Configuration: 1: Vc1 2: RFin 3: NC 4: Vcntrl1 5: Vcntrl2 6: Vc2 7 (paddle): GND
For further information please visit www.triquint.com Rev. A; November 14th, 2005.
pg. 1/14
CGB241
Data Sheet
2-Stage Bluetooth & WLAN InGaP HBT Pow...
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