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BSP100
N-channel enhancement mode TrenchMOS transistor
Description
Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS™
transistor
FEATURES ’Trench’ technology Low on-state resistance Fast switching High thermal cycling performance Low thermal resistance BSP100 SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 6 A g RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) s GE...
NXP
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