BSP090

DISCRETE SEMICONDUCTORS DATA SHEET BSP090 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jan 20 File under Discrete Semiconductors, SC07 1997 Mar 13 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES High speed switching No secondary breakdown Very low on-state resistance. APPLICATIONS Motor and actuator drivers Power management Synchronized rectification. handbook, halfpage BSP090 PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d gate drain source drain DESCRIPTION 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. g CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. s 1 Top view 2 3 MAM121 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = −1 mA; VDS = VGS Ts = 100 °C Ts = 100 °C IS = −1.25 A CONDITIONS − − − −1 − − MIN. MAX. −30 −1.3 ±20 −2.8 −5.7 0.09 5 V V V V A Ω W UNIT ID = −2.8 A; VGS = −10 V − 1997 Mar 13 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance wit...