BSO613SPV

Preliminary data SIPMOS® Small-Signal-Transistor Features · BSO613SPV Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current S S S G 1 2 3 4 Top View 8 7 6 5 P-Channel Enhancement mode Avalanche rated dv/dt rated VDS RDS(on) ID D D D D -60 0.13 -3.44 V W · · · A SIS00062 Type BSO613SPV Package SO 8 Ordering Code Q67042-S4021 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -3.44 -13.8 150 0.25 6 Unit A ID ID puls EAS EAR dv/dt T A = 25 °C Pulsed drain current T A = 25 °C Avalanche energy, single pulse mJ I D = -3.44 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs I S = -3.44 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 2.5 -55... +150 55/150/56 V W °C T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 1999-11-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint; t £ BSO613SPV Symbol min. Values typ. max. 25 Unit RthJS RthJA - K/W 10 sec. - - 100 50 @ 6 cm 2 cooling area 1); t £ 10 sec. Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -3 max. -4 µA -0.1 -10 -10 0...