Preliminary data
SIPMOS® Small-Signal-Transistor Features
·
BSO613SPV
Product Summary Drain source voltage Drain-sourc...
Preliminary data
SIPMOS® Small-Signal-
Transistor Features
·
BSO613SPV
Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
S S S G 1 2 3 4 Top View 8 7 6 5
P-Channel Enhancement mode Avalanche rated dv/dt rated
VDS RDS(on) ID
D D D D
-60 0.13 -3.44
V
W
·
· ·
A
SIS00062
Type BSO613SPV
Package SO 8
Ordering Code Q67042-S4021
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current
Value -3.44 -13.8 150 0.25 6
Unit A
ID ID puls EAS EAR
dv/dt
T A = 25 °C
Pulsed drain current
T A = 25 °C
Avalanche energy, single pulse mJ
I D = -3.44 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
kV/µs
I S = -3.44 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C
Gate source voltage Power dissipation
VGS Ptot Tj , Tstg
±20 2.5 -55... +150 55/150/56
V W °C
T A = 25 °C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
1999-11-22
Preliminary data
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint; t
£
BSO613SPV
Symbol min.
Values typ. max. 25
Unit
RthJS RthJA
-
K/W
10 sec.
-
-
100 50
@ 6 cm 2 cooling area 1); t £ 10 sec.
Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -3 max. -4 µA -0.1 -10 -10 0...