Document
Preliminary data OptiMOSâ Small-Signal-Transistor
BSO4822
Product Summary Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • 150°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching applications Type BSO4822 Package SO 8 Ordering Code Q67042-S4095 Marking 4822 VDS RDS(on) ID 30 10 12.7 V mΩ A
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value 12.7 10.2
Unit A
Pulsed drain current
TA=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
51 165 6 ±20 2.5 -55... +150 55/150/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =12.7 A , VDD =25V, RGS =25Ω
Reverse diode dv/dt
IS =12.7A, VDS =24V, di/dt=200A/µs, Tjmax =150°C
Gate source voltage Power dissipation
TA =25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
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2002-01-28
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB:
@ min. footprint; t ≤ 10 sec. @ 6 cm 2 cooling area 1); t ≤ 10 sec.
BSO4822
Symbol min. RthJS RthJA -
Values typ. max. 35 110 50
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = VDS
ID =55µA
Zero gate voltage drain current
VDS =30V, VGS =0, Tj =25°C VDS =30V, VGS =0, Tj =125°C
µA 0.01 10 1 12 8.5 1 100 100 14.4 10 nA mΩ
Gate-source leakage current
VGS =20V, VDS=0
Drain-source on-state resistance
VGS =4.5V, ID =10.6A
Drain-source on-state resistance
VGS =10V, ID=12.7A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2002-01-28
Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss RG td(on) tr td(off) tf
VDD =15V, VGS=10V, ID =12.7A, RG =5.1Ω VDS ≥2*ID *RDS(on)max , ID =10.2A VGS =0, VDS =25V, f=1MHz
BSO4822
Symbol
Conditions min. 15.5 -
Values typ. 31 1310 480 100 1.3 7.9 38 30 16 max. 1640 600 150 12 57 45 24
Unit
S pF
Ω ns
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr
VGS =0, IF=1.9A VR =15V, IF =lS , diF /dt=100A/µs
Qgs Qgd Qg Qoss
VDD =15V, ID=12.7A
-
4.4 9.8 21 17.5 2.9
5.5 12.2 26.2 22 -
nC
VDD =15V, ID=12.7A, VGS =0 to 5V VDS =15V, ID =12.7A, VGS =0
V(plateau) VDD =15V, ID=12.7A
V
IS ISM
TA=25°C
-
0.83 29 25
1.9 51 1.2 36 31
A
V ns nC
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2002-01-28
Preliminary data 1 Power dissipation Ptot = f (TA )
BSO4822
BSO4822
2 Drain current ID = f (TA) parameter: VGS ≥ 10 V
BSO4822
2.8
14
W
2.4 2.2 2
A
12 11 10
Ptot
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120
ID
°C TA
160
1.8
9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120
°C
TA
160
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C
10
2 BSO4822
4 Transient thermal impedance ZthJS = f (tp ) parameter : D = tp /T
10 2
tp = 32.0µs
= R
o S( D n)
VD
BSO4822
A
K/W
100 µs
10 1 10
1 1 ms
ID
10 ms
Z thJS
10 0
10 0 D = 0.50 10
-1
0.20 0.10
10 -1 DC 10 -2 single pulse
0.05 0.02 0.01
10 -2 -1 10
10
0
10
1
V
10
2
10 -3 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10
s
10
2
VDS
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tp
2002-01-28
Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs
j BSO4822
BSO4822
6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS
32
BSO4822
30
A
Ptot = 2.5W
i hg f
VGS [V] a 2.6
d
e
mΩ
24 22
c d e
3.0 3.2 3.4 3.6 3.8 4.0 4.5 10.0
RDS(on)
e
b
2.8
24
f
ID
20 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5
a b c d
20
g h
f g h i j
16
12
i j
8 4 VGS [V] =
d 3.2 e f 3.4 3.6 g 3.8 h i j 4.0 4.5 10.0
4
V
5
0 0
4
8
12
16
20
A
28
VDS
ID
7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs
32
8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs
60
S A
50 24 45
20
g fs
0.5 1 1.5 2 2.5 3 4 V VGS
ID
40 35
16
30 25
12 20 8 15 10 4 5 0 0 0 0 10 20 30 40 50 60 80 A ID
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2002-01-28
Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 12.7 A, VGS = 10 V
mΩ
21
BSO4822
BSO4822
10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS
2.5
18 16 14 12
V V GS(th)
max.
RDS(on)
typ.
1.5
98%
10
min.
typ
8 6 4 2 0 -60
1
0..