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BSO4822 Dataheets PDF



Part Number BSO4822
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description OptiMOS Small-Signal-Transistor
Datasheet BSO4822 DatasheetBSO4822 Datasheet (PDF)

Preliminary data OptiMOSâ Small-Signal-Transistor BSO4822 Product Summary Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • 150°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching applications Type BSO4822 Package SO 8 Ordering Code Q67042-S4095 Marking 4822 VDS RDS(on) ID 30 10 12.7 V mΩ A Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID .

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Preliminary data OptiMOSâ Small-Signal-Transistor BSO4822 Product Summary Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • 150°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching applications Type BSO4822 Package SO 8 Ordering Code Q67042-S4095 Marking 4822 VDS RDS(on) ID 30 10 12.7 V mΩ A Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 12.7 10.2 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 51 165 6 ±20 2.5 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =12.7 A , VDD =25V, RGS =25Ω Reverse diode dv/dt IS =12.7A, VDS =24V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA =25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-28 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint; t ≤ 10 sec. @ 6 cm 2 cooling area 1); t ≤ 10 sec. BSO4822 Symbol min. RthJS RthJA - Values typ. max. 35 110 50 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID =55µA Zero gate voltage drain current VDS =30V, VGS =0, Tj =25°C VDS =30V, VGS =0, Tj =125°C µA 0.01 10 1 12 8.5 1 100 100 14.4 10 nA mΩ Gate-source leakage current VGS =20V, VDS=0 Drain-source on-state resistance VGS =4.5V, ID =10.6A Drain-source on-state resistance VGS =10V, ID=12.7A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-28 Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss RG td(on) tr td(off) tf VDD =15V, VGS=10V, ID =12.7A, RG =5.1Ω VDS ≥2*ID *RDS(on)max , ID =10.2A VGS =0, VDS =25V, f=1MHz BSO4822 Symbol Conditions min. 15.5 - Values typ. 31 1310 480 100 1.3 7.9 38 30 16 max. 1640 600 150 12 57 45 24 Unit S pF Ω ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, IF=1.9A VR =15V, IF =lS , diF /dt=100A/µs Qgs Qgd Qg Qoss VDD =15V, ID=12.7A - 4.4 9.8 21 17.5 2.9 5.5 12.2 26.2 22 - nC VDD =15V, ID=12.7A, VGS =0 to 5V VDS =15V, ID =12.7A, VGS =0 V(plateau) VDD =15V, ID=12.7A V IS ISM TA=25°C - 0.83 29 25 1.9 51 1.2 36 31 A V ns nC Page 3 2002-01-28 Preliminary data 1 Power dissipation Ptot = f (TA ) BSO4822 BSO4822 2 Drain current ID = f (TA) parameter: VGS ≥ 10 V BSO4822 2.8 14 W 2.4 2.2 2 A 12 11 10 Ptot 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 ID °C TA 160 1.8 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 °C TA 160 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 2 BSO4822 4 Transient thermal impedance ZthJS = f (tp ) parameter : D = tp /T 10 2 tp = 32.0µs = R o S( D n) VD BSO4822 A K/W 100 µs 10 1 10 1 1 ms ID 10 ms Z thJS 10 0 10 0 D = 0.50 10 -1 0.20 0.10 10 -1 DC 10 -2 single pulse 0.05 0.02 0.01 10 -2 -1 10 10 0 10 1 V 10 2 10 -3 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 s 10 2 VDS Page 4 tp 2002-01-28 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs j BSO4822 BSO4822 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 32 BSO4822 30 A Ptot = 2.5W i hg f VGS [V] a 2.6 d e mΩ 24 22 c d e 3.0 3.2 3.4 3.6 3.8 4.0 4.5 10.0 RDS(on) e b 2.8 24 f ID 20 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 a b c d 20 g h f g h i j 16 12 i j 8 4 VGS [V] = d 3.2 e f 3.4 3.6 g 3.8 h i j 4.0 4.5 10.0 4 V 5 0 0 4 8 12 16 20 A 28 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 32 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 60 S A 50 24 45 20 g fs 0.5 1 1.5 2 2.5 3 4 V VGS ID 40 35 16 30 25 12 20 8 15 10 4 5 0 0 0 0 10 20 30 40 50 60 80 A ID Page 5 2002-01-28 Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 12.7 A, VGS = 10 V mΩ 21 BSO4822 BSO4822 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.5 18 16 14 12 V V GS(th) max. RDS(on) typ. 1.5 98% 10 min. typ 8 6 4 2 0 -60 1 0..


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