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BSO4410

Infineon Technologies AG

OptiMOS Small-Signal-Transistor

Preliminary data OptiMOS =Small-Signal-Transistor Feature BSO4410 Product Summary VDS RDS(on) ID 30 13 11.1 V A m ...


Infineon Technologies AG

BSO4410

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Description
Preliminary data OptiMOS =Small-Signal-Transistor Feature BSO4410 Product Summary VDS RDS(on) ID 30 13 11.1 V A m  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS(on) product (FOM) 150°C operating temperature  Avalanche rated  dv/dt rated Ideal for fast switching applications Type BSO4410 Package SO 8 Ordering Code Q67042-S4096 Q67042-S4044-A Marking 4410 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 11.1 8.9 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 44.5 126 6 ±20 2.5 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =11.1 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =11.1A, VDS =24V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA =25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-09-06 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1); t 10 sec. BSO4410 Symbol min. RthJS RthJA - Values typ. max. 35 110 50 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, V...




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