BSO307N

Preliminary Data SIPMOS  Small-Signal-Transistor Features Dual N channel BSO 307N Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 30 0.05 5 V Ω A Enhancement mode Avalanche rated Logic Level dv/dt rated Type BSO 307 N Parameter Continuous drain current, one channel active Package SO 8 Symbol Ordering Code Q67000-S4012 Value 5 20 55 5 0.2 6 mJ A mJ kV/µs Unit A Maximum Ratings, at T j = 25 ˚C, unless otherwise specified ID IDpulse EAS IAR EAR dv/dt T A = 25 ˚C Pulsed drain current, one channel active T A = 25 ˚C Avalanche energy, single pulse I D = 5 A, VDD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 5 A, V DS = 24 V, di/dt = 200 A/µs, T jmax = 150 ˚C Gate source voltage Power dissipation, one channel active VGS Ptot Tj Tstg ±20 2 -55...+150 -55 ... +150 55/150/56 V W ˚C T A = 25 ˚C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 BSO 307N Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec., 6 cm2 cooling area 1) Symbol min. Values typ. max. 35 100 62.5 K/W Unit RthJS Rth(JA) Rth(JA) - Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter min. Static Characteristics Drain- source brea...