Preliminary Data
SIPMOS Small-Signal-Transistor Features • Dual N channel
•
BSO 307N
Product Summary
Drain source vo...
Preliminary Data
SIPMOS Small-Signal-
Transistor Features Dual N channel
BSO 307N
Product Summary
Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS RDS(on) ID
30 0.05 5
V Ω A
Enhancement mode
Avalanche rated Logic Level dv/dt rated
Type BSO 307 N
Parameter Continuous drain current, one channel active
Package SO 8
Symbol
Ordering Code Q67000-S4012
Value 5 20 55 5 0.2 6 mJ A mJ kV/µs Unit A
Maximum Ratings, at T j = 25 ˚C, unless otherwise specified
ID IDpulse EAS IAR EAR
dv/dt
T A = 25 ˚C
Pulsed drain current, one channel active
T A = 25 ˚C
Avalanche energy, single pulse
I D = 5 A, VDD = 25 V, R GS = 25 Ω
Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
I S = 5 A, V DS = 24 V, di/dt = 200 A/µs, T jmax = 150 ˚C
Gate source voltage Power dissipation, one channel active
VGS Ptot Tj Tstg
±20 2 -55...+150 -55 ... +150 55/150/56
V W ˚C
T A = 25 ˚C
Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
BSO 307N
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec., 6 cm2 cooling area 1) Symbol min. Values typ. max. 35 100 62.5 K/W Unit
RthJS Rth(JA) Rth(JA)
-
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter min. Static Characteristics Drain- source brea...