BSO200P03S

BSO200P03S OptiMOS®-P Small-Signal-Transistor Features P-Channel Enhancement mode Logic level 150°C operating temperature Avalanche rated dv /dt rated Ideal for fast switching buck converter Product Summary V DS R DS(on),max ID -30 20 -9.1 V mΩ A P-DSO-8 53 Type BSO200P03S Package P-DSO-8 Ordering Code Q67042-S4234 Marking 200P03S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value ≤10 secs Continuous drain current ID T A=25 °C1) T A=70 °C1) Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C2) I D=-9.1 A, R GS=25 Ω -9.1 -7.3 -37 98 mJ steady state -7.4 -5.9 A Unit Reverse diode dv /dt dv /dt I D=-9.1 A, V DS=20 V, di /dt =-200 A/µs, T j,max=150 °C -6 kV/µs Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.01 V GS P tot T j, T stg T A=25 °C1) 2.36 ±25 1.56 V W °C -55 ... 150 55/150/56 page 1 2004-02-13 BSO200P03S Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area1), t p≤10 s 6 cm2 cooling area1), steady state Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250µA V GS(th) V DS=V GS, I D=-100 µA V DS=-30 V, V GS=0 V, T j=...