BSO104N03S

BSO104N03S OptiMOS®2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated dv /dt rated 1 Product Summary V DS R DS(on),max ID 30 9.7 13 V mΩ A P-DSO-8 Type BSO104N03S Package P-DSO-8 Ordering Code Q67042-S4210 Marking 104N3S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value 10 secs Continuous drain current ID T A=25 °C2) T A=70 °C2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T A=25 °C2) 2.5 T A=25 °C3) I D=13 A, R GS=25 Ω I D=13 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 13 10 52 73 6 ±20 1.56 -55 ... 150 55/150/56 mJ kV/µs V W °C steady state 10 8 A Unit Rev. 1.11 page 1 2004-02-09 BSO104N03S Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area2), t p≤10 s 6 cm2 cooling area2), steady state Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero ...