BSN274

DISCRETE SEMICONDUCTORS DATA SHEET BSN274; BSN274A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc., due to low threshold voltage High speed switching No secondary breakdown DESCRIPTION Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current (DC) drain-source on-resistance threshold voltage BSN274; BSN274A MAX. 270 250 8 2 V UNIT mA Ω V PINNING (BSN274) PIN 1 2 3 gate drain source DESCRIPTION PINNING (BSN274A) PIN 1 2 3 gate drain DESCRIPTION source Note: Other pinnings are available on request. PIN CONFIGURATION - TO-92 VARIANT handbook, halfpage d 1 2 3 g MAM146 s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current drain current total power dissipation storage temperature range operating junction temp...