DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BSN20W N-channel enhancement mode vertical D-MOS transistor
...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BSN20W N-channel enhancement mode vertical D-MOS
transistor
Product specification Supersedes data of 1997 Jun 20 2000 Mar 10
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS
transistor
FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Thin and thick film circuits General purpose fast switching applications. DESCRIPTION N-channel enhancement mode vertical D-MOS
transistor in a 3 pin plastic SOT323 SMD package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSth ID RDSon Ptot Note 1. Device mounted on a printed-circuit board. PARAMETER drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation Tamb ≤ 25 °C; note 1 CONDITIONS 50 1.8 80 15 200 MAX. V V
g 1 Top view 2
MAM356
BSN20W
PINNING - SOT323 PIN 1 2 3 SYMBOL g s d DESCRIPTION gate source drain
handbook, halfpage
3
d
s
Marking code: M8- = made in Hong Kong; M8t = made in Malaysia (or Bangkok).
Fig.1 Simplified outline and symbol.
UNIT
mA Ω mW
2000 Mar 10
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS ...