BSM50GD60DN2E3226

BSM50GD60DN2E3226 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate E3226: long terminals, limited current per terminal Type BSM50GD60DN2E3226 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V VCE 600V IC 50A Package ECONOPACK 2 Ordering Code C67070-A2515-A67 VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 TC = 25 °C Pulsed collector current, tp = 1 ms ICpuls 100 TC = 25 °C Power dissipation per IGBT Ptot 200 W + 150 -55 ... + 150 ≤ 0.6 ≤ 1.5 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Jan-10-1997 BSM50GD60DN2E3226 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 6.5 2.7 2.8 V VGE = VCE, IC = 1 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 50 A, Tj = 25 °C VGE = 15 V, IC = 50 A, Tj = 125 °C Zero gate voltage collector current ICES 1.5 mA nA 100 VCE = 600 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V...