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BSM50GD60DN2

Siemens Semiconductor Group
Part Number BSM50GD60DN2
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BSM 50 GD 60 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package w...
Datasheet PDF File BSM50GD60DN2 PDF File

BSM50GD60DN2
BSM50GD60DN2

Overview
BSM 50 GD 60 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 50 GD 60 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V VCE 600V IC 50A Package ECONOPACK 2K Ordering Code C67076-A2515-A67 VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 TC = 40 °C Pulsed collector current, tp = 1 ms ICpuls 100 TC = 40 °C Power dissipation per IGBT Ptot 200 W + 150 -55 .
.
.
+ 150 ≤ 0.
6 ≤ 1.
5 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case ...


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