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BSM50GB170DN2 Dataheets PDF



Part Number BSM50GB170DN2
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description IGBT
Datasheet BSM50GB170DN2 DatasheetBSM50GB170DN2 Datasheet (PDF)

BSM 50 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 27 Ohm Type BSM 50 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2701-A67 1700V 72A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 72 50 TC = 25 °C TC = 80 °C Pulsed collector c.

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BSM 50 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 27 Ohm Type BSM 50 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2701-A67 1700V 72A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 72 50 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 144 100 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 500 W + 150 -55 ... + 150 ≤ 0.25 ≤ 0.75 4000 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Jul-31-1996 BSM 50 GB 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.8 5.5 3.4 4.6 0.4 1.6 6.2 3.9 5.3 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 50 A, Tj = 25 °C VGE = 15 V, IC = 50 A, Tj = 125 °C Zero gate voltage collector current ICES 0.5 - mA VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 320 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 18 8 0.64 0.25 - S nF - VCE = 20 V, IC = 50 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-31-1996 BSM 50 GB 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit td(on) 350 700 ns VCC = 1200 V, VGE = 15 V, IC = 50 A RGon = 27 Ω Rise time tr 150 300 VCC = 1200 V, VGE = 15 V, IC = 50 A RGon = 27 Ω Turn-off delay time td(off) 650 1000 VCC = 1200 V, VGE = -15 V, IC = 50 A RGoff = 27 Ω Fall time tf 90 140 VCC = 1200 V, VGE = -15 V, IC = 50 A RGoff = 27 Ω Free-Wheel Diode Diode forward voltage VF 2.3 2.1 2.8 - V IF = 50 A, VGE = 0 V, Tj = 25 °C IF = 50 A, VGE = 0 V, Tj = 125 °C Reverse recovery time trr 0.3 - µs IF = 50 A, VR = -1200 V, VGE = 0 V diF/dt = -600 A/µs, Tj = 125 °C Reverse recovery charge Qrr µC IF = 50 A, VR = -1200 V, VGE = 0 V diF/dt = -600 A/µs Tj = 25 °C Tj = 125 °C 4 12 - Semiconductor Group 3 Jul-31-1996 BSM 50 GB 170 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 550 W Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 A tp = 1.6µs Ptot 450 400 350 300 250 IC 10 2 10 µs 10 1 100 µs 1 ms 200 150 100 50 0 0 20 40 60 80 100 120 °C 160 10 -1 0 10 10 1 10 0 10 ms DC 10 2 10 3 V TC VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 90 A Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 IGBT K/W IC 70 60 50 40 30 20 ZthJC 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 0.02 single pulse 0.01 10 0 0 10 -3 -5 10 20 40 60 80 100 120 °C 160 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Semiconductor Group 4 Jul-31-1996 BSM 50 GB 170 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C 100 A IC = f (VCE) parameter: tp = 80 µs, Tj = 125 °C 100 A 17V 15V 13V 11V 9V 7V IC 80 70 60 50 40 30 20 10 0 0.0 IC 80 70 60 50 40 30 20 10 0 0.0 17V 15V 13V 11V 9V 7V 1.0 2.0 3.0 4.0 V 6.0 1.0 2.0 3.0 4.0 V 6.0 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 200 A IC 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Jul-31-1996 BSM 50 GB 170 DN2 Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 50 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 nF VGE 16 14 12 10 8 C 10 1 800 V 1200 V Ciss 10 0 6 Coss 4 2 0 0.0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 µC 0.9 -1 Crss 0 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V 2.5 ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 250 500 750 1000 1250 1500 V 2000 VCE 0 0 250 500 750 1000 1250 1500 V 2000 VCE Semiconductor Group 6 Jul-31-1996 BSM 50 GB 170 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, RG = 27 Ω 10 4 t = f (RG) , inductive load , Tj = 125°C par.: VCE = 1200 V, VGE = ± 15 V, IC = 50 A 10 4 ns t 10 3 ns t tdoff 10 tdoff tdon.


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