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BSM35GD120D2

Siemens Semiconductor Group
Part Number BSM35GD120D2
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BSM 35 GD 120 D2 IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel di...
Datasheet PDF File BSM35GD120D2 PDF File

BSM35GD120D2
BSM35GD120D2

Overview
BSM 35 GD 120 D2 IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 35 GD 120 D2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package SIXPACK 1 Ordering Code C67076-A2506-A17 1200V 50A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 35 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 100 70 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 280 W + 150 -55 .
.
.
+ 150 ≤ 0.
44 ≤ 0.
8 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Stor...


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