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BSM300GA170DN2E3166

Siemens Semiconductor Group
Part Number BSM300GA170DN2E3166
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged ...
Datasheet PDF File BSM300GA170DN2E3166 PDF File

BSM300GA170DN2E3166
BSM300GA170DN2E3166

Overview
BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 5.
6 Ohm Type BSM300GA170DN2 E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package SINGLE SWITCH 1 Ordering Code C67070-A2710-A67 1700V 440A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 440 300 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 880 600 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 2500 W + 150 -55 .
.
.
+ 150 ≤ 0.
05 ≤ 0.
1 4000 20 11 F 55 / 150 / 56 Vac mm K...


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