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BSM200GT120DN2

Siemens Semiconductor Group
Part Number BSM200GT120DN2
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BSM 200 GT 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast ...
Datasheet PDF File BSM200GT120DN2 PDF File

BSM200GT120DN2
BSM200GT120DN2

Overview
BSM 200 GT 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 200 GT 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package TRIPACK Ordering Code C67070-A2519-A67 1200V 300A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 300 200 TC = 25 °C TC = 125 °C Pulsed collector current, tp = 1 ms ICpuls 600 400 TC = 25 °C TC = 125 °C Power dissipation per IGBT Ptot 1400 W + 150 -55 .
.
.
+ 150 ≤ 0.
09 0.
18 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip t...


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