BSM181F

SIMOPAC® Module BSM 181 F VDS = 800 V ID = 34 A R DS(on) = 0.32 Ω q q q q q q q Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 181 F Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-A1052-A2 Symbol Values 800 800 ± 20 34 136 – 55 … + 150 700 ≤ 0.18 2500 16 11 F 55/150/56 Unit V VDS VDGR VGS ID ID puls Tj, Tstg Ptot Rth JC Vis – – – – Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 ˚C Pulsed drain current, TC = 25 ˚C Operating and storage temperature range Power dissipation, TC = 25 ˚C Thermal resistance Chip-case Insulation test voltage2), t = 1 min. Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) 2) A ˚C W K/W Vac mm – See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 64 03.96 BSM 181 F Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 800 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 21 A ...