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BSM 15 GD 120 D2
IGBT Power Module
• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 15 GD 120 D2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package SIXPACK 1
Ordering Code C67076-A2504-A17
1200V 25A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 25 15
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
50 30
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
145
W + 150 -55 ... + 150 ≤ 0.86 ≤ 1.5 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W °C
TC = 25 °C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD Vis
-
Semiconductor Group
1
Feb-10-1997
BSM 15 GD 120 D2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 0.3 1.2 6.5 3 3.7
V
VGE = VCE, IC = 0.6 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C
Zero gate voltage collector current
ICES
0.5 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
150
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
5.5 1000 150 70 -
S pF -
VCE = 20 V, IC = 15 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Feb-10-1997
BSM 15 GD 120 D2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit
td(on)
55 110
ns
VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Ω
Rise time
tr
45 90
nS
VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Ω
Turn-off delay time
td(off)
400 600
ns
VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Ω
Fall time
tf
70 100
VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Ω
Free-Wheel Diode Diode forward voltage
VF
2.4 1.9 2.9 -
V
IF = 15 A, VGE = 0 V, Tj = 25 °C IF = 15 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
trr
0.1 -
µs
IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C
Reverse recovery charge
Qrr
µC
IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C
1 3 -
Semiconductor Group
3
Feb-10-1997
BSM 15 GD 120 D2
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
150 W 130
Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 2
tp = 11.0µs
A
Ptot
120 110 100 90 80 70 60 50 40 30
IC
10 1
100 µs
10 0
1 ms
10 ms
20 10 0 0 10 -1 0 10
20
40
60
80
100
120
°C
160
10
1
10
2
DC 3 10
V
TC
VCE
Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C
26 A 22
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 0
IGBT
K/W
IC
20 18 16 14 12 10
ZthJC
10 -1
D = 0.50 0.20 10
-2
0.10 0.05 single pulse 0.02 0.01
8 6 4 2 0 0 20 40 60 80 100 120 °C 160 10 -3 -5 10 10
-4
10
-3
10
-2
10
-1
s 10
0
TC
tp
Semiconductor Group
4
Feb-10-1997
BSM 15 GD 120 D2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
30 A 26 17V 15V 13V 11V 9V 7V
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
30 A 26 17V 15V 13V 11V 9V 7V
IC
24 22 20 18 16 14 12 10 8 6 4 2 0 0
IC
24 22 20 18 16 14 12 10 8 6 4 2 0 0
1
2
3
V
5
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
30 A 26
IC
24 22 20 18 16 14 12 10 8 6 4 2 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Feb-10-1997
BSM 15 GD 120 D2
Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 15 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
nF
VGE
16 14 12 10 8
C
600 V
800 V
10 0
Ciss
10 -1 6 4 2 0 0 10 -2 0
Coss Crss
10
20
30
40
50
60
70
80
nC 100
5
10
15
20
25
30
QGate
V 40 VCE
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V
2.5
ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH
12
ICpuls/IC
ICsc/IC
8 1.5 6 1.0 4
0.5 2
0.0 0 200 400 600 800 1000 1200 V 1600 VCE
0 0 200 400 600 800 1000 1200 V 1600 VCE
Semiconductor Group
6
Feb-10-1997
BSM 15 GD 120 D2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω
10 3
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A
10 3 tdoff
t
ns
tdoff
t
ns
tdon 10 2 tr tdon tf tf 10 2 tr
1.